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| Datasheet File OCR Text: |
| TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -45 -5 -0.1 0.45 150 -55-150 Units V V V A W ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Test conditions IE=0 MIN -50 -45 -5 -0.05 -0.05 60 1000 -0.3 -1 100 V V MHz TYP MAX UNIT V V V IC= -100A, IC= -1mA, IB=0 IE=-100A, IC=0 VCB=-50V, IE=0 VEB= -5V, IC=0 VCE=-5V, IC= -1mA IC=-100mA, IB= -10mA IC=-100mA, IB=-10mA VCE=-5V, IC= -10mA A A fT hFE(1) A 60-150 f=30MHz B 100-300 C CLASSIFICATION OF Rank Range D 400-1000 200-600 Typical Characteristics S9015 |
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